Eur. Phys. J. B 71, 233-236 (2009)
https://doi.org/10.1140/epjb/e2009-00294-0

Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems

Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca. Morelos, Mexico

Corresponding author: ^a memora@uaem.mx

Received: 22 May 2009
Revised: 28 July 2009
Published online: 18 August 2009

Abstract

The influence of hydrostatic pressure on the low-temperature electron conductivity in n-type GaAs δ-doped single quantum wells is studied. The effect of the pressure on the electron mobility is described via a relative quantity that is proportional to the ratio between the results for P ≠ 0 and P = 0. Calculation is performed using an analytical description taking explicitly into account the dependence upon P of the main input parameters; i.e. effective mass and dielectric constant. It is shown that the effect of hydrostatic pressure is to increase the low-temperature resistivity of the two-dimensional electron gas in the system.