Eur. Phys. J. B 72, 127-131 (2009)
https://doi.org/10.1140/epjb/e2009-00326-9

Particle penetration in Kane type semiconductor quantum dots

¹ Institute of Physics, Azerbaijan National Academy of Sciences, 370143 Baku, Azerbaijan
² Department of Physics, University of Suleyman Demirel, Isparta, 32260, Turkey
³ Department of Micro and Nanotechnology, Middle East Technical University, Isparta, 32260, Turkey

Corresponding author: ^a arifb@fef.sdu.edu.tr

Received: 1 April 2009
Revised: 24 August 2009
Published online: 7 October 2009

Abstract

In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A³B⁵-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs.