Eur. Phys. J. B 80, 89-93 (2011)
https://doi.org/10.1140/epjb/e2011-10902-y

The effects of the intense laser field on bound states in Ga_xIn_1-xN_yAs_1-yN/GaAs single quantum well

¹ Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
² Instituto de Fisica, Universidad de Antioquia, AA, 1226 Medellin, Colombia
³ Dokuz Eylül University, Physics Department, 35160 Buca, Izmir, Turkey

Corresponding author: ^a ekasap@cumhuriyet.edu.tr

Received: 20 November 2010
Revised: 6 January 2011
Published online: 1 March 2011

Abstract

We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga_xIn_1-xN_yAs_1-yN/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.