https://doi.org/10.1140/epjb/e2011-10902-y
The effects of the intense laser field on bound states in GaxIn1-xNyAs1-yN/GaAs single quantum well
1
Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
2
Instituto de Fisica, Universidad de Antioquia, AA, 1226 Medellin, Colombia
3
Dokuz Eylül University, Physics Department, 35160 Buca, Izmir, Turkey
Corresponding author: a ekasap@cumhuriyet.edu.tr
Received:
20
November
2010
Revised:
6
January
2011
Published online:
1
March
2011
We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1-xNyAs1-yN/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011