https://doi.org/10.1140/epjb/e2011-10626-0
Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling
Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin 1983963113, Tehran, Iran
Corresponding author: a m-ghanaat@cc.sbu.ac.ir
Received:
15
August
2010
Revised:
9
February
2011
Published online:
18
March
2011
We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011