Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling
Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin 1983963113, Tehran, Iran
Corresponding author: a email@example.com
Revised: 9 February 2011
Published online: 18 March 2011
We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011