https://doi.org/10.1140/epjb/e2011-20046-9
Tunneling in mesoscopic junctions using the numerical renormalization group method
Departamento de Física-ICE, Universidade Federal do Amazonas, 69077-000 Manaus, Am, Brazil
Corresponding author: a hfrota@ufam.edu.br
Received:
16
January
2011
Revised:
3
April
2011
Published online:
4
May
2011
We have applied the Numerical Renormalization Group method to study a
mesoscopic system consisting of two samples of a metal separated by an
insulating barrier with nanometer dimensions. It allows the tunnelling of
a single electron from one side to the other side of the junction. The junction is
represented by a generalized orthodox model, which considers the
electronic scattering interaction due to the hole and the tunnelling electrons,
localized in the source and in the drain electrode, respectively. We have
calculated the static properties (charge transfer, charge average,
quadractic charge average and specific heat) and the electric conductivity of
the junction for the model parameters given by the tunneling matrix element t, the barrier energy 
(where C is the capacitance of the
system) and by the electronic scattering potentials 
acting on the
electrons of the left(right) electrode.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2011
