https://doi.org/10.1140/epjb/e2017-80394-x
Regular Article
Electronic thermal Hall effect in silicene
1
Department of Physics, Shaoxing University,
Shaoxing
312000, P.R. China
2
Key Laboratory for Advanced Microstructure Materials of the Ministry of Education and Department of Physics, Tongji University,
Shanghai
200092, P.R. China
a e-mail: yhyan@fudan.edu.cn
Received:
4
July
2017
Received in final form:
13
August
2017
Published online: 16 October 2017
We theoretically investigate the electronic thermal Hall effect in silicene via a discrete four-band model. Based on the linear response theory, a formalism to address the transverse thermal conductivity is developed. In the absence of an exchange field, the transverse thermal conductivity vanishes due to the time-reversal symmetry. The transverse conductivity becomes finite in the presence of an exchange field and exhibits several peaks with opposite signs. The peak values increase as the field becomes strong. However, as the temperature becomes high, the peak values begin to decay. The results may be helpful in exploring spin caloritronics based on silicene.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2017