https://doi.org/10.1140/epjb/e2018-90503-0
Regular Article
Enhanced ferroelectric properties and energy storage density in PLZT/BNKT heterolayered thin films prepared by sol-gel method
1
School of Engineering Physics, Ha Noi University of Science and Technology,
1 Dai Co Viet Road,
Hanoi, Vietnam
2
International Training Institute for Materials Scince, Hanoi University of Science and Technology,
1 Dai Co Viet Road,
Hanoi, Vietnam
3
Vietnam Academy of Science and Technology, Graduate University of Science and Technology,
18 Hoang Quoc Viet Road,
Hanoi, Vietnam
4
Vietnam Academy of Science and Technology, Institute of Natural Products Chemistry,
18 Hoang Quoc Viet Road,
Hanoi, Vietnam
a e-mail: hong.nguyenvan@hust.edu.vn
Received:
14
August
2018
Received in final form:
29
October
2018
Published online: 13 December 2018
The PLZT/BNKT heterolayered thin films on Pt/Ti/SiO2/Si substrates were fabricated by chemical solution deposition. The influence of different heterolayered structures on the microstructures, ferroelectric and energy storage properties of the films was investigated and clarified in detail. Based on the heterolayered structures, ferroelectric properties and energy storage density (Jreco) of the films were significantly enhanced. The maximum polarization (Pmax) and Pmax-Pr get the maximum values of 71.4 μC/cm2 and 56.7 μC/cm2, respectively. The extreme value of recoverable energy storage density was 8.1 J/cm3 for the heterolayered film S(7-1). These results demonstrate that the PLZT/BNKT heterolayered films are real potential candidates for electrostatic energy storage devices that are environment-friendly.
Key words: Solid State and Materials
© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2018