Regular Article

Tunneling spectrum in triplet p-wave superconductor-silicene junctions

College of Science, China University of Petroleum, Qingdao 266580, P.R. China

^a e-mail: lihong302@upc.edu.cn

Received: 30 October 2019
Published online: 18 December 2019

Abstract

The tunneling spectrum in normal/triplet p-wave superconductor (N/pS)-undoped and doped silicene junction is studied based on Blonder-Tinkham-Klapwijk (BTK) theory. Three kinds of pairings for pS are chosen: p_x, p_y, p_x + ip_ywaves. It is found that the normalized conductance (NC) strongly depends on the kind of pairings, the insulating gap which varies in magnitude with an applied electric field (Ez) and the chemical potential in the normal silicene region. For N/pS-undoped silicene junctions, the Andreev reflection (AR) and the NC can be switched on or off by the applied electric field while the transport can occur for all the bias voltage in doped silicene junctions. A sharp zero-bias conductance peak (ZBCP) is obtained in N/pS-doped silicene junction that is independent of the values of the insulating gap of silicene and distinctly different from the normal/d-wave superconductor-silicene junctions. In addition, for N/p_xS-silicene junctions the NC exhibits a double-minimum structure when the bias voltage eV = 0.8Δ₀ with Δ₀ the zero-temperature energy gap of pS while a little peak appears for N/p_yS case. In N/p_x+ip_yS-silicene junctions a sharp peak and a conductance dip appear at eV = 0.8Δ₀ and eV = Δ₀, respectively. It is hoped that the results obtained may guide the design of silicene devices.