Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: numerical study
Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research,
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Received in final form: 4 February 2020
Published online: 6 April 2020
By using the real-space Green-Kubo formalism we study numerically the electron transport properties of low-fluorinated graphene. At low temperatures the diffuse transport regime is expected to be prevalent, and we found a pronounced electron-hole asymmetry in electrical conductivity as a result of quasi-resonant scattering on the localized states. For the finite temperatures in the variable-range hopping transport regime the interpretation of numerical results leads to the appearance of local minima and maxima of the resistance near the energies of the localized states. A comparison with the experimental measurements of the resistance in graphene samples with various fluorination degrees is discussed.
Key words: Solid State and Materials
© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2020