https://doi.org/10.1140/epjb/s10051-021-00096-w
Regular Article – Solid State and Materials
Hot carrier dynamics of photoinjected plasma in indium nitride
School of Exact Sciences and Computing, Pontifical Catholic University of Goiás, CP 86, 74605-010, Goiânia, Goiás, Brazil
Received:
12
December
2020
Accepted:
1
April
2021
Published online:
11
April
2021
A theoretical study using the nonequilibrium statistical operator method is performed to investigate the ultrafast transient transport properties of photoexcited carriers in wurtzite InN subjected to electric fields up to 20 kV/cm. The evolution toward the steady state of the drift velocity of carriers (electrons and holes) and nonequilibrium temperature (carriers and phonons) is determined. The transient regime occurs at the subpicosecond scale with maxima and minima in the hole and electron drift velocities.
© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2021
