https://doi.org/10.1140/epjb/s10051-021-00111-0
Regular Article - Solid State and Materials
The theoretical study of the mobility of a two-dimensional electron gas in ALGaN/GaN/ALGaN double heterostructures
1
University of Science - VNUHCM, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City, Vietnam
2
Vietnam National University, Ho Chi Minh City, Vietnam
3
Tran Dai Nghia University, Ho Chi Minh City, Vietnam
4
Ho Chi Minh City University of Education, 280 An Duong Vuong Street, 5th District, Ho Chi Minh City, Vietnam
Received:
14
March
2021
Accepted:
2
May
2021
Published online:
17
May
2021
We investigate the drift and Hall mobility of a quasi-two-dimensional electron gas (Q2DEG) confined in wurtzite AlGaN/GaN/AlGaN square quantum wells (QWs). We use the variational-subband-wave-function model for carrier confinement and assume that the electrons only occupy the lowest subband. We take into consideration the most important scattering mechanisms such as the edge and charged dislocation, remote and background impurity, interface roughness, acoustic phonon via deformation potential and piezoelectric field, and polar LO phonon. Assuming the scattering by acoustic phonons to be quasi-elastic and using the iterative method for inelastic regime, where the LO phonon scattering becomes important, we study the dependence of the mobility on the temperature T, carrier density 
, and QW width L.
© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2021
