Eur. Phys. J. B (2021) 94: 104
https://doi.org/10.1140/epjb/s10051-021-00116-9
https://doi.org/10.1140/epjb/s10051-021-00116-9
Erratum
Erratum to: Improvement electronic and magnetic properties of Cr impurity doped PbSe for optoelectronic devices applications: a first-principles proposal
1
Faculty of Science and Technology, University Belhadj Bouchaib, BP 284, 46000, Ain-Temouchent, Algeria
2
Ecole Normale Supérieure d’Oran, BP 1063 Saim Mohamed, 31003, Oran, Algeria
3
University Centre Nour Bachir El Bayadh, El Bayadh, Algeria
4
Laboratory Physico-Chemistry of Advanced Materials, University of Djillali Liabes, 22000, Sidi-Bel-Abbes, Algeria
A Correction to this paper has been published: https://doi.org/10.1140/epjb/s10051-021-00106-x
© EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2021
