Regular Article - Mesoscopic and Nanoscale Systems
Optical gain enhancement and wavefunction confinement tuning in AlSb/InGaAsP/GaAsSb heterostructures
Department of Electronics and Communication Engineering, Manipal University Jaipur, 303007, Jaipur, India
2 Department of Electrical Engineering, Shiv Nadar University, 201314, G. B. Nagar, India
Accepted: 21 May 2021
Published online: 6 June 2021
The results from self-consistent computation of optical gain characteristics of AlSb/InGaAsP/GaAsSb type-II ultra-thin quantum-well heterostructures show a marked improvement in optical gain as compared to the InGaAsP/GaAsSb type-II ultra-thin quantum well heterostructures. The AlSb/InGaAsP/GaAsSb type-II ultra-thin quantum well heterostructures were designed to obtain enhanced optical gain as compared to InGaAsP/GaAsSb type-II quantum well heterostructures. An improvement in optical gain of 948 and a shift in peak energy of 0.03 eV is attributed to interband resonant tunnelling effect and the band alignment due to the presence of GaAsSb layer. Also, a narrower optical gain spectrum is observed in QW heterostructure as compared to the QW heterostructures. Furthermore, the effect of variation in well width has been studied at AlSb layer thickness 1 nm for optical gain enhancement and wavefunction confinement where the resonant tunnelling effect is observed.
© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2021