https://doi.org/10.1140/epjb/s10051-022-00434-6
Regular Article - Mesoscopic and Nanoscale Systems
A computational investigation to tune the optical gain in AlSb/InGaAsSb/AlSb type-I quantum well heterostructure
1
Department of Electronics and Communication Engineering, Bhagalpur College of Engineering, Bihar, India
2
Department of Electronics and Communication Engineering, Manipal University Jaipur, Rajasthan, India
Received:
30
July
2022
Accepted:
8
October
2022
Published online:
19
October
2022
GaSb-based type-I heterostructure exhibited low optical gain hence further investigations are needed to study the technique for tuning the optical gain characteristics. In this paper, the main emphasis has been given to studying the optical gain characteristics and lasing wavelength of GaSb-based Type-I AlSb/InGaAsSb/AlSb heterostructure under uniaxial strain (0–8 GPa) the variable well width ranging from 2.5 to 4.5 nm and carrier density ranging from 5 × 1012 cm−2 to 9 × 1012 cm−2at room temperature. It was observed that the wider quantum well width can enhance the optical gain with redshift in wavelength. For the proposed heterostructure maximum optical gain is achieved when the quantum well size is 4.5 nm and carrier concentration is 9 × 1012 cm−2. The calculations were performed using the two-band k.p model and Fermi Golden Rules. Computational analysis suggests that the designed heterostructure is compatible as an optical source in the telecom window of optical fiber communication.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
