Eur. Phys. J. B (2022) 95: 94
https://doi.org/10.1140/epjb/s10051-022-00357-2

Regular Article - Mesoscopic and Nanoscale Systems

Photoluminescence properties of type I InAs/InGaAsSb quantum dots

¹ Institut Préparatoire aux Etudes Scientifiques et Techniques, Laboratoire Matèriaux-Molécules et Applications, Université de Carthage, BP51, 2070, La Marsa, Tunisia
² Université de Tunis, Ecole Nationale Supérieure des Ingénieurs de Tunis, 5 Rue Taha Hussein, Montfleury, 1008, Tunis, Tunisia
³ National Center for Nanotechnology and Advanced Materials, KACST, 11442, Riyadh, Saudi Arabia
⁴ Qatar Environment and Energy Research Institute (QEERI), Hamad Bin Khalifa University, PO Box 34110, Qatar Foundation, Doha, Qatar

^a afefmansour23@yahoo.com

Received: 3 January 2022
Accepted: 23 May 2022
Published online: 11 June 2022

Abstract

This paper presents a detailed study on the effect of the strain reducing layer (SRL) made with InGaAsSb on the photoluminescence (PL) of type I InAs/GaAs quantum dots (QDs). For the InGaAsSb SRL, measurement results have shown that the emission wavelength reaches 1.4 µm for the ground state (GS) and 1.33 µm for the first excited state (ES) at room temperature (RT). Besides, the investigation of the temperature-dependent PL shows the strong effect of SRL in reducing the barrier potential at the interface between the capping layer and QDs, and increasing the carrier injection efficiency inside the QDs, at low temperature, leading to an enhancement of the luminescence of this sample. Furthermore, the increase of excitation density from 40 to 200 W/cm² for all temperature between 10 and 220 K reveals that incorporating InGaAsSb SRL in InAs/GaAs QDs is of great importance on the understanding of some devices operating at room temperature or higher.