Eur. Phys. J. B (2022) 95: 110
https://doi.org/10.1140/epjb/s10051-022-00374-1

Regular Article - Mesoscopic and Nanoscale Systems

Electron transport properties of the transition metal dichalcogenides composite WX₂-MoX₂ (X≡S, Se, Te) nanowires under the external strain

¹ College of Physics, Mechanical and Electrical Engineering, Jishou University, 416000, Jishou, China
² College of Information Science and Engineering, Jishou University, 416000, Jishou, China
³ Key Laboratory of Mineral Cleaner Production and Exploit of Green Functional Materials in Hunan Province, Jishou University, 416000, Jishou, China

^f whliao@jsu.edu.cn

Received: 23 March 2022
Accepted: 22 June 2022
Published online: 11 July 2022

Abstract

We have investigated the electronic structure and transport properties of the transition metal dichalcogenides composite WX₂-MoX₂ (X≡S, Se, Te) nanowires under the external strain, in the method of the first-principles calculation combining the Density functional theory (DFT) and the Non-equilibrium Green’s function (NEGF). First, we have designed the two terminal electron transport devices based on the stable transition metal dichalcogenides (TMDs) WX₂-MoX₂ (X≡S, Se, Te) composite nanowires for the first time. Second, the electronic structure and transport properties of the WS₂-MoS₂ composite nanowire have been demonstrated to be more sensitive to the external strain when compared to that of the composite WSe₂/Te₂-MoSe₂/Te₂ nanowires, the external compressive strain may significantly enchance the differential negative resistance (DNR) effect of the WSe₂-MoSe₂ composite nanowire based device, while the stretch strain should induce the interesting DNR in the WTe₂-MoTe₂ composite nanowire device. Finally, the obtained results have been physically explained from the integral area of the transmission coefficient in the bias voltage window, and may be of importance in the design of the nanoelectronic devices based on transition metal dichalcogenides composites.