https://doi.org/10.1140/epjb/s10051-024-00664-w
Regular Article - Solid State and Materials
Interfacial properties in planar SiC/2D metals from first principles
1
Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, 100875, Beijing, China
2
School of Science, Jiangnan University, 214122, Wuxi, China
b
liaobingz@bnu.edu.cn
c
baoanbian@jiangnan.edu.cn
Received:
5
January
2024
Accepted:
26
February
2024
Published online:
19
March
2024
We construct the in-plane heterojunctions of Boroβ12/SiC and Graphene/SiC to study the effect of different interface contacts on the electronic properties using first-principle calculations. The metalization of SiC at the contact interface is found in both heterojunctions, and two heterojunctions show high charge inject efficiency. The Boroβ12/SiC possesses p-type Schottky contact, while Graphene/SiC shows n-type Schottky contact. When the electric field is applied to two heterojunctions, the Schottky barrier height and contact type are changed, and the Ohmic contact is achieved at negative electric field. The results propose a way to design planar SiC-based electronic device with tunable interface contact.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
