https://doi.org/10.1140/epjb/s10051-024-00731-2
Regular Article - Solid State and Materials
Temperature dependence of photoconductivity in layered semiconductor p-GaSe
1
Composite Materials Scientific Research Center of Azerbaijan State Univeristy of Economics (UNEC), 194 M.Mukhtarov Street, 1065, Baku, Azerbaijan
2
Western Caspian University, 31 Istiglaliyyat Street, 1001, Baku, Azerbaijan
Received:
1
May
2024
Accepted:
14
June
2024
Published online:
25
June
2024
The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities (ρ77 = 2·103 ÷ 7·106 Ω·cm) was experimentally studied in the temperature range of 77 ÷ 300 K. It has been established that in crystals with ρ77 < 104 Ω cm, only the value of the photocurrent changes depending on temperature. At T ≤ 250 K, in the higher-resistivity crystal, the spectral distribution, lux-ampere characteristic, as well as photoconductivity kinetics also change noticeably with a change in temperature. The obtained experimental results are explained on the basis of a model of crystalline semiconductor with random macroscopic defects.
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